SEOUL, South Korea / RankWire.AI / – Samsung Electronics revealed its advanced approach to memory and storage solutions aimed at artificial intelligence infrastructure during the 2026 OCP Global Summit. The presentation took place in San Jose, California, from October 12 to 15. The company outlined three core technological pathways: high-performance memory, Compute Express Link-based memory expansion, and next-generation solid-state drives. Additionally, Samsung announced a joint CXL demonstration with Advanced Micro Devices. This strategy is designed to address memory bottlenecks that hinder the development of larger AI workloads.
Samsung’s comprehensive plan centers on enhancing speed, expanding memory scalability, and improving data durability. The first pillar emphasizes high-performance memory, with the company showcasing tailored high-bandwidth memory along with HBM5, its eighth-generation HBM. The second pillar leverages CXL technology to augment memory capacity beyond what each server can currently support. The third pillar involves advancing data storage and management through next-generation enterprise SSDs and storage software solutions. Samsung asserts that these three components collectively boost overall AI system efficiency.
The firm linked its strategy to the increasing memory demands driven by AI inference workloads and larger models. As models grow, they produce more data during inference, necessitating greater memory capacity. Conventional server designs often impose limits on processor memory. Samsung proposes CXL as a solution to surpass these constraints without requiring a complete system redesign. The company also emphasized key-value cache optimization, which allows AI models to reuse previously processed data instead of recomputing it repeatedly.
Samsung and AMD showcase CXL-based memory expansion technology
At the summit, Samsung and AMD demonstrated a CXL-enabled memory expansion system that facilitates sharing of memory resources and flexible capacity scaling across AI platforms. Samsung reports that this technology has been validated in real-world system environments. The two companies signed a memorandum of understanding in March 2026 to collaborate on next-generation AI memory and computing innovations. Additionally, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss further cooperation in memory and foundry sectors.
Samsung also showcased CMM-D, its CXL-based DRAM memory module, configured for memory pooling. This setup connects multiple CXL memory modules into a shared pool that various systems can access as needed. Other exhibits included processing-in-memory technology, which performs certain calculations within memory chips to reduce data transfer needs. Samsung displayed 2-nanometer gate-all-around wafers and Groq LPU wafers. Nvidia’s Groq 3 LPX system was also among the company’s display items.
Partners gain early access to validation of memory solutions
During an executive session, Samsung’s Corporate Vice President and Head of Application Engineering, Shim Ho-jun, discussed the strategy, emphasizing the increasing importance of expanding memory capacity and bandwidth as AI models continue to grow and inference demands rise. Shim explained that Samsung is intensifying co-design and technical validation efforts with global partners early in development stages. This approach aims to ensure memory products align with customer system needs before market release.
Samsung MAX Lab supports this initiative by enabling clients to test memory and storage technologies under real AI workloads. This allows validation of innovations like PIM and next-generation SSDs prior to commercialization. The company attended the summit as a Diamond Sponsor of the Open Compute Project event. This participation follows Samsung’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. Samsung continues to emphasize memory capacity as a vital element of AI infrastructure performance.